IPA037N08N3 Datasheet and Replacement
Type Designator: IPA037N08N3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 1640 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: TO-220FP
IPA037N08N3 substitution
IPA037N08N3 Datasheet (PDF)
ipa037n08n3.pdf

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ipa037n08n3.pdf

isc N-Channel MOSFET Transistor IPA037N08N3,IIPA037N08N3FEATURESLow drain-source on-resistance:RDS(on) 3.7m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
ipa037n08n3g.pdf

IPA037N08N3 GOptiMOS(TM)3 Power-TransistorProduct Summary FeaturesVDS 80 V Ideal for high frequency switching and sync. rec.RDS(on),max 3.7 mW Optimized technology for DC/DC convertersID 75 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compli
ipa030n10n3g.pdf

IPA030N10N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max 3 mW Excellent gate charge x R product (FOM)DS(on)ID 79 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequen
Datasheet: FDA44N50 , FDI036N10A , FDP8D5N10C , FDPF8D5N10C , FMW60N190S2HF , FQD50N06 , FQD50P06 , IPA030N10N3 , 5N50 , IPA045N10N3 , IPA057N08N3 , IPA086N10N3 , IPA60R180C7 , IPA60R360P7 , IPAN60R650CE , IPB048N15N5 , IPI030N10N3 .
History: IRF5802PBF
Keywords - IPA037N08N3 MOSFET datasheet
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History: IRF5802PBF



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