All MOSFET. IPAN60R650CE Datasheet

 

IPAN60R650CE Datasheet and Replacement


   Type Designator: IPAN60R650CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-220FP
 

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IPAN60R650CE Datasheet (PDF)

 ..1. Size:727K  1
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IPAN60R650CE

IPAN60R650CEMOSFETPG-TO 220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting

 ..2. Size:727K  infineon
 ipan60r650ce.pdf pdf_icon

IPAN60R650CE

IPAN60R650CEMOSFETPG-TO 220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting

 ..3. Size:222K  inchange semiconductor
 ipan60r650ce.pdf pdf_icon

IPAN60R650CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPAN60R650CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATIN

 6.1. Size:1027K  infineon
 ipan60r600p7s.pdf pdf_icon

IPAN60R650CE

IPAN60R600P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

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Datasheet: FQD50P06 , IPA030N10N3 , IPA037N08N3 , IPA045N10N3 , IPA057N08N3 , IPA086N10N3 , IPA60R180C7 , IPA60R360P7 , 20N60 , IPB048N15N5 , IPI030N10N3 , IPI037N08N3 , IPI041N12N3 , IPI051N15N5 , IPI072N10N3 , IPI075N15N3 , IPI076N12N3 .

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