IPAN60R650CE Datasheet and Replacement
Type Designator: IPAN60R650CE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO-220FP
IPAN60R650CE substitution
IPAN60R650CE Datasheet (PDF)
ipan60r650ce.pdf

IPAN60R650CEMOSFETPG-TO 220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting
ipan60r650ce.pdf

IPAN60R650CEMOSFETPG-TO 220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting
ipan60r650ce.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPAN60R650CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATIN
ipan60r600p7s.pdf

IPAN60R600P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ
Datasheet: FQD50P06 , IPA030N10N3 , IPA037N08N3 , IPA045N10N3 , IPA057N08N3 , IPA086N10N3 , IPA60R180C7 , IPA60R360P7 , 20N60 , IPB048N15N5 , IPI030N10N3 , IPI037N08N3 , IPI041N12N3 , IPI051N15N5 , IPI072N10N3 , IPI075N15N3 , IPI076N12N3 .
Keywords - IPAN60R650CE MOSFET datasheet
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History: PDC3904Z | HAT2166N



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