IPI180N10N3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI180N10N3
Marking Code: 180N10N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 43 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 237 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO-262
IPI180N10N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI180N10N3 Datasheet (PDF)
ipi180n10n3.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI180N10N3FEATURESStatic drain-source on-resistance:RDS(on) 18mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
ipp180n10n3-g ipi180n10n3-g.pdf
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IPP180N10N3 GIPI180N10N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 18mDS(on),max TO-263 Excellent gate charge x R product (FOM)DS(on)I 43 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applicatio
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