IPI180N10N3 Specs and Replacement
Type Designator: IPI180N10N3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 43 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 237 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO-262
IPI180N10N3 substitution
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IPI180N10N3 datasheet
ipi180n10n3.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPI180N10N3 FEATURES Static drain-source on-resistance RDS(on) 18m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
ipp180n10n3-g ipi180n10n3-g.pdf
IPP180N10N3 G IPI180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 18 m DS(on),max TO-263 Excellent gate charge x R product (FOM) DS(on) I 43 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applicatio... See More ⇒
Detailed specifications: IPI075N15N3, IPI076N12N3, IPI076N15N5, IPI086N10N3, IPI100N08N3, IPI110N20N3, IPI111N15N3, IPI147N12N3, IRF3710, IPI200N15N3, IPI200N25N3, IPI26CN10N, IPI320N20N3, IPI35CN10N, IPI530N15N3, IPI600N25N3, IPI80CN10N
Keywords - IPI180N10N3 MOSFET specs
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