IPI320N20N3 Specs and Replacement

Type Designator: IPI320N20N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO-262

IPI320N20N3 substitution

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IPI320N20N3 datasheet

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 ipi320n20n3.pdf pdf_icon

IPI320N20N3

isc N-Channel MOSFET Transistor IPI320N20N3 FEATURES Static drain-source on-resistance RDS(on) 32m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

 0.1. Size:419K  infineon
 ipb320n20n3g ipp320n20n3g ipi320n20n3g ipp320n20n3g ipb320n20n3g ipi320n20n3g .pdf pdf_icon

IPI320N20N3

IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 200 V DS N-channel, normal level R 32 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 34 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applica... See More ⇒

 0.2. Size:731K  infineon
 ipp320n20n3g ipb320n20n3g ipi320n20n3g.pdf pdf_icon

IPI320N20N3

$ " " $$ " " $ " " TM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 200 V DS Q ' 381>>5?B=1... See More ⇒

Detailed specifications: IPI100N08N3, IPI110N20N3, IPI111N15N3, IPI147N12N3, IPI180N10N3, IPI200N15N3, IPI200N25N3, IPI26CN10N, 2N7000, IPI35CN10N, IPI530N15N3, IPI600N25N3, IPI80CN10N, IRFL3713S, IRFP3207Z, IRFP4905, IRFSL4510

Keywords - IPI320N20N3 MOSFET specs

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