All MOSFET. IPI320N20N3 Datasheet

 

IPI320N20N3 Datasheet and Replacement


   Type Designator: IPI320N20N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO-262
 

 IPI320N20N3 substitution

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IPI320N20N3 Datasheet (PDF)

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IPI320N20N3

isc N-Channel MOSFET Transistor IPI320N20N3FEATURESStatic drain-source on-resistance:RDS(on) 32mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 0.1. Size:419K  infineon
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IPI320N20N3

IPB320N20N3 G IPP320N20N3 GIPI320N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 200 VDS N-channel, normal levelR 32mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 34 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applica

 0.2. Size:731K  infineon
 ipp320n20n3g ipb320n20n3g ipi320n20n3g.pdf pdf_icon

IPI320N20N3

$ " " $$ " " $ " " TM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 200 VDSQ ' 381>>5?B=1

Datasheet: IPI100N08N3 , IPI110N20N3 , IPI111N15N3 , IPI147N12N3 , IPI180N10N3 , IPI200N15N3 , IPI200N25N3 , IPI26CN10N , IRF9540 , IPI35CN10N , IPI530N15N3 , IPI600N25N3 , IPI80CN10N , IRFL3713S , IRFP3207Z , IRFP4905 , IRFSL4510 .

History: IPP093N06N3 | SPP77N06S2-12 | WMK060N10LGS | FQPF13N50T | AM7341P | TPC6103 | RU80T4H

Keywords - IPI320N20N3 MOSFET datasheet

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