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IPI80CN10N Spec and Replacement


   Type Designator: IPI80CN10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO-262

 IPI80CN10N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI80CN10N Specs

 ..1. Size:705K  infineon
ipb80cn10n ipd78cn10n ipi80cn10n ipp80cn10n ipu78cn10n.pdf pdf_icon

IPI80CN10N

IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 78 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 13 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi... See More ⇒

 ..2. Size:261K  inchange semiconductor
ipi80cn10n.pdf pdf_icon

IPI80CN10N

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPI80CN10N FEATURES Static drain-source on-resistance RDS(on) 0.08 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

 0.1. Size:534K  infineon
ipb79cn10n-g ipd78cn10n-g ipi80cn10n-g ipp80cn10n-g.pdf pdf_icon

IPI80CN10N

IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 78 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 13 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC... See More ⇒

 0.2. Size:1028K  infineon
ipb79cn10ng ipd78cn10ng ipi80cn10ng ipp80cn10ng.pdf pdf_icon

IPI80CN10N

IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 78 mW Excellent gate charge x R product (FOM) DS(on) ID 13 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) ... See More ⇒

Detailed specifications: IPI180N10N3 , IPI200N15N3 , IPI200N25N3 , IPI26CN10N , IPI320N20N3 , IPI35CN10N , IPI530N15N3 , IPI600N25N3 , IRFP250N , IRFL3713S , IRFP3207Z , IRFP4905 , IRFSL4510 , IRFSL7762 , IRFSL7787 , IRFU430A , 12N65KL-TA .

Keywords - IPI80CN10N MOSFET specs

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