IPI80CN10N Datasheet. Specs and Replacement

Type Designator: IPI80CN10N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO-262

  📄📄 Copy 

IPI80CN10N substitution

- MOSFET ⓘ Cross-Reference Search

 

IPI80CN10N datasheet

 ..1. Size:705K  infineon
ipb80cn10n ipd78cn10n ipi80cn10n ipp80cn10n ipu78cn10n.pdf pdf_icon

IPI80CN10N

IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 78 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 13 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi... See More ⇒

 ..2. Size:261K  inchange semiconductor
ipi80cn10n.pdf pdf_icon

IPI80CN10N

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPI80CN10N FEATURES Static drain-source on-resistance RDS(on) 0.08 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

 0.1. Size:534K  infineon
ipb79cn10n-g ipd78cn10n-g ipi80cn10n-g ipp80cn10n-g.pdf pdf_icon

IPI80CN10N

IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 78 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 13 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC... See More ⇒

 0.2. Size:1028K  infineon
ipb79cn10ng ipd78cn10ng ipi80cn10ng ipp80cn10ng.pdf pdf_icon

IPI80CN10N

IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 78 mW Excellent gate charge x R product (FOM) DS(on) ID 13 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) ... See More ⇒

Detailed specifications: IPI180N10N3, IPI200N15N3, IPI200N25N3, IPI26CN10N, IPI320N20N3, IPI35CN10N, IPI530N15N3, IPI600N25N3, IRFP250N, IRFL3713S, IRFP3207Z, IRFP4905, IRFSL4510, IRFSL7762, IRFSL7787, IRFU430A, 12N65KL-TA

Keywords - IPI80CN10N MOSFET specs

 IPI80CN10N cross reference

 IPI80CN10N equivalent finder

 IPI80CN10N pdf lookup

 IPI80CN10N substitution

 IPI80CN10N replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility