All MOSFET. IRFU430A Datasheet

 

IRFU430A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFU430A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 24(max) nC

Rise Time (tr): 27 nS

Drain-Source Capacitance (Cd): 750 pF

Maximum Drain-Source On-State Resistance (Rds): 1.7 Ohm

Package: TO-251

IRFU430A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFU430A Datasheet (PDF)

0.1. irfr430apbf irfu430apbf.pdf Size:251K _international_rectifier

IRFU430A
IRFU430A

PD -95076A SMPS MOSFET IRFR430APbF IRFU430APbF Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) max ID l High speed power switching 500V 1.7Ω 5.0A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance

0.2. irfr430a irfr430apbf irfu430apbf sihfr430a sihfu430a.pdf Size:252K _vishay

IRFU430A
IRFU430A

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RDS(on) ()VGS = 10 V 1.7 • Improved Gate, Avalanche and Dynamic Qg (Max.) (nC) 24 dV/dt Ruggedness Qgs (nC) 6.5 • Fully Characterized Capacitance and Qgd (nC) 13 Avalanche Voltage and Current

 0.3. irfr430a irfu430a sihfr430a sihfu430a.pdf Size:154K _vishay

IRFU430A
IRFU430A

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 1.7 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 24 COMPLIANT Ruggedness Qgs (nC) 6.5 Qgd (nC) 13 • Fully Characterized Capacitance and Avalanche Voltage

0.4. irfu430a.pdf Size:272K _inchange_semiconductor

IRFU430A
IRFU430A

isc N-Channel MOSFET Transistor IRFU430A FEATURES ·Drain Current –I = 5A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·Static Drain-Source On-Resistance : R = 1.7Ω(Max) DS(on) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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