12N65KG-TF Datasheet. Specs and Replacement

Type Designator: 12N65KG-TF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 125 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-220F

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12N65KG-TF datasheet

 0.1. Size:298K  utc
12n65kl-ta3-t 12n65kg-ta3-t 12n65kl-tf1-t 12n65kg-tf1-t 12n65kl-tf2-t 12n65kg-tf2-t 12n65kl-tf3-t 12n65kg-tf3-t 12n65kl-tq2-t 12n65kg-tq2-t 12n65kl-tq2-r 12n65kg-tq2-r.pdf pdf_icon

12N65KG-TF

UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, ... See More ⇒

 5.1. Size:298K  1
12n65kl-t 12n65kg-t.pdf pdf_icon

12N65KG-TF

UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, ... See More ⇒

 8.2. Size:218K  inchange semiconductor
12n65kl-tf1-t.pdf pdf_icon

12N65KG-TF

isc N-Channel MOSFET Transistor 12N65KL-TF1-T FEATURES Static Drain-Source On-Resistance R ... See More ⇒

Detailed specifications: IRFP4905, IRFSL4510, IRFSL7762, IRFSL7787, IRFU430A, 12N65KL-TA, 12N65KL-TQ, 12N65KG-TA, 2SK3568, 12N65KG-TQ, HY3306P, HY3306B, IRFS630B, MT3203, SVF5N60T, SVF5N60F, SVF5N60D

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