HY3306B PDF and Equivalents Search

 

HY3306B Specs and Replacement

Type Designator: HY3306B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 621 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: TO263

HY3306B substitution

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HY3306B datasheet

 ..1. Size:4015K  1
 hy3306p hy3306b.pdf pdf_icon

HY3306B

HY3306P/B N-Channel Enhancement Mode MOSFET Features Pin Description 60V/130A RDS(ON)= 5.4 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S Lead Free and Green Devices Available D G (RoHS Compliant) S D G TO-263-2L TO-263-2L TO-220FB-3L TO-220FB-3L Applications D Switching application Power Management for Inverter Systems. G N-Channel MOSFET ... See More ⇒

 ..2. Size:948K  hymexa
 hy3306p hy3306b.pdf pdf_icon

HY3306B

HY3306P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 60V/130A RDS(ON)= 5.4m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead- Free Devices Available (RoHS Compliant) Applications Portable equipment and battery powered systems Synchronous rectification N-Channel MOSFET Ordering and Marking Information Package Code... See More ⇒

Detailed specifications: IRFSL7787, IRFU430A, 12N65KL-TA, 12N65KL-TQ, 12N65KG-TA, 12N65KG-TF, 12N65KG-TQ, HY3306P, SPP20N60C3, IRFS630B, MT3203, SVF5N60T, SVF5N60F, SVF5N60D, SVF5N60MJ, TSP5N60M, TSF5N60M

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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