HY3306B MOSFET. Datasheet pdf. Equivalent
Type Designator: HY3306B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 67 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 621 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: TO263
HY3306B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY3306B Datasheet (PDF)
hy3306p hy3306b.pdf
HY3306P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/130ARDS(ON)= 5.4 m (typ.) @ VGS=10V100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFET
hy3306p hy3306b.pdf
HY3306P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 60V/130A RDS(ON)= 5.4m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead- Free Devices Available (RoHS Compliant) Applications Portable equipment and battery powered systems Synchronous rectification N-Channel MOSFET Ordering and Marking Information Package Code
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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