SVF5N60T Datasheet and Replacement
Type Designator: SVF5N60T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 28.4 nS
Cossⓘ - Output Capacitance: 62.7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.15 Ohm
Package: TO220
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SVF5N60T Datasheet (PDF)
svf5n60t svf5n60f svf5n60d svf5n60mj.pdf
SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior
svf5n60t svf5n60f svf5n60d svf5n60mj.pdf
SVF5N60T/F/D/MJ 5A600V N 2SVF5N60T/F/D/MJ NMOSF-CellTMVDMOS 1 TO-252-2L3
svf5n60f svf5n60d svf5n60k.pdf
SVF5N60F/D/K 5A600V N 2SVF5N60F/D/K N MOS F-CellTM VDMOS 1133TO-252-2L 1.
svf5n60f svf5n60dtr svf5n60k.pdf
SVF5N60F/D/K 5A600V N 2SVF5N60F/D/K N MOS 1 1 F-CellTM VDMOS 3TO-252-2L3 1.
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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History: GSM3030 | IRF6612
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