SVF5N60MJ Specs and Replacement
Type Designator: SVF5N60MJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28.4 nS
Cossⓘ - Output Capacitance: 62.7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.15 Ohm
Package: TO251
SVF5N60MJ substitution
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SVF5N60MJ datasheet
svf5n60t svf5n60f svf5n60d svf5n60mj.pdf
SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior... See More ⇒
svf5n60t svf5n60f svf5n60d svf5n60mj.pdf
SVF5N60T/F/D/MJ 5A 600V N 2 SVF5N60T/F/D/MJ N MOS F-CellTM VDMOS 1 TO-252-2L 3 ... See More ⇒
Detailed specifications: 12N65KG-TQ, HY3306P, HY3306B, IRFS630B, MT3203, SVF5N60T, SVF5N60F, SVF5N60D, 5N65, TSP5N60M, TSF5N60M, AO6414, MC6414, CMP40P03, CSD40N70, FQPF20N60, FQP20N60
Keywords - SVF5N60MJ MOSFET specs
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History: SWF2N70D | PSA07N65
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