SVF5N60MJ MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVF5N60MJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.27 nC
   trⓘ - Rise Time: 28.4 nS
   Cossⓘ - Output Capacitance: 62.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.15 Ohm
   Package: TO251

SVF5N60MJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SVF5N60MJ Datasheet (PDF)

..1. Size:528K 1
svf5n60t svf5n60f svf5n60d svf5n60mj.pdf

SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior

..2. Size:479K silan
svf5n60t svf5n60f svf5n60d svf5n60mj.pdf