TSP5N60M Datasheet and Replacement
Type Designator: TSP5N60M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO220
TSP5N60M substitution
TSP5N60M Datasheet (PDF)
tsp5n60m tsf5n60m.pdf

TSP5N60M/TSF5N60M 600V N-Channel MOSFET Features 4.5A,600v,RDS(on)=2.2@VGS=10V Gate charge (Typical 17nC) High ruggedness Fast switching 100% AvalancheTested Improved dv/dt capability General Description This Power MOSFET is produced using Truesemis advanced planar stripe, DMOS technology.This latest technology has been especially designed t
tsp5n60m tsf5n60m.pdf

TSP5N60M/TSF5N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 4.5A,600V,Max.RDS(on)=2.50 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an
tsp5n65m tsf5n65m.pdf

TSP5N65M/TSF5N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 4.5A,650V,Max.RDS(on)=3.0 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperform
Datasheet: HY3306P , HY3306B , IRFS630B , MT3203 , SVF5N60T , SVF5N60F , SVF5N60D , SVF5N60MJ , IRF530 , TSF5N60M , AO6414 , MC6414 , CMP40P03 , CSD40N70 , FQPF20N60 , FQP20N60 , FTD06N03NA .
History: RU17P12C
Keywords - TSP5N60M MOSFET datasheet
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History: RU17P12C



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