AO6414 MOSFET. Datasheet pdf. Equivalent
Type Designator: AO6414
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 3.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
Package: TSOP6
AO6414 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO6414 Datasheet (PDF)
ao6414 mc6414.pdf
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FreescaleAO6414/ MC6414N-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)92 @ VGS = 10V3.4 Low thermal impedance 60107 @ VGS = 4.5V3.1 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX
ao6415.pdf
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AO641520V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO6415 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -3.3Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)
ao6411.pdf
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AO641120V P-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology -20V Low RDS(ON) ID (at VGS=-4.5V) -7A Low Gate Charge RDS(ON) (at VGS=-4.5V)
ao6415.pdf
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SMD Type MOSFETP-Channel MOSFETAO6415 (KO6415)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) =-20V6 5 4 ID =-3.3A (VGS =-10V) RDS(ON) 82m (VGS =-10V) RDS(ON) 100m (VGS =-4.5V) RDS(ON) 140m (VGS =-2.5V) 2 31+0.020.15 -0.02 ESD Rating: 2000V HBM+0.01-0.01+0.2-0.1D1 Drain 4 Source2 Drain 5 Drain3 Gate
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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