GPT18N50GN3P PDF and Equivalents Search

 

GPT18N50GN3P Specs and Replacement

Type Designator: GPT18N50GN3P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69.3 nS

Cossⓘ - Output Capacitance: 275.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO3P

GPT18N50GN3P substitution

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GPT18N50GN3P datasheet

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GPT18N50GN3P

GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 4 GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220F 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 5 GPT18N50 / GPT18N50D ... See More ⇒

Detailed specifications: TSF5N60M, AO6414, MC6414, CMP40P03, CSD40N70, FQPF20N60, FQP20N60, FTD06N03NA, TK10A60D, GPT18N50GN247, GPT18N50DGN220FP, HY1001P, HY3610P, ISA07N65A, JCS13N50FT, JCS3205CH, JCS3205SH

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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