All MOSFET. GPT18N50GN3P Datasheet

 

GPT18N50GN3P Datasheet and Replacement


   Type Designator: GPT18N50GN3P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 60 nC
   tr ⓘ - Rise Time: 69.3 nS
   Cossⓘ - Output Capacitance: 275.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO3P
 

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GPT18N50GN3P Datasheet (PDF)

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GPT18N50GN3P

GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 4 GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220F 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 5 GPT18N50 / GPT18N50D

Datasheet: TSF5N60M , AO6414 , MC6414 , CMP40P03 , CSD40N70 , FQPF20N60 , FQP20N60 , FTD06N03NA , TK10A60D , GPT18N50GN247 , GPT18N50DGN220FP , HY1001P , HY3610P , ISA07N65A , JCS13N50FT , JCS3205CH , JCS3205SH .

History: FTD06N03NA | CSD40N70 | MC6414

Keywords - GPT18N50GN3P MOSFET datasheet

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