GPT18N50DGN220FP MOSFET. Datasheet pdf. Equivalent
Type Designator: GPT18N50DGN220FP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 69.3 nS
Cossⓘ - Output Capacitance: 275.2 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO220F
GPT18N50DGN220FP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GPT18N50DGN220FP Datasheet (PDF)
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gpt18n50g gpt18n50dg.pdf
gpt18n50g gpt18n50dg.pdf
GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 4 GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220F 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 5 GPT18N50 / GPT18N50D
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