GPT18N50DGN220FP PDF and Equivalents Search

 

GPT18N50DGN220FP Specs and Replacement

Type Designator: GPT18N50DGN220FP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69.3 nS

Cossⓘ - Output Capacitance: 275.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO220F

GPT18N50DGN220FP substitution

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GPT18N50DGN220FP datasheet

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 gpt18n50g gpt18n50dg.pdf pdf_icon

GPT18N50DGN220FP

GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 4 GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220F 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 5 GPT18N50 / GPT18N50D ... See More ⇒

Detailed specifications: MC6414, CMP40P03, CSD40N70, FQPF20N60, FQP20N60, FTD06N03NA, GPT18N50GN3P, GPT18N50GN247, BS170, HY1001P, HY3610P, ISA07N65A, JCS13N50FT, JCS3205CH, JCS3205SH, KIA2906A-220, KIA2906A-247

Keywords - GPT18N50DGN220FP MOSFET specs

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