All MOSFET. SVD730T Datasheet

 

SVD730T Datasheet and Replacement


   Type Designator: SVD730T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO220
 

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SVD730T Datasheet (PDF)

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SVD730T

SVD730D/F/T_Datasheet 5.5A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD730D/F/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryS-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

Datasheet: KIA2906A-247 , KIA50N06 , NTD4963NG , PFP13N60 , PFF13N60 , QM3054M6 , SVD730D , SVD730F , IRF830 , TP0202T , TP0610K , TTK2837 , UT70N03G , DG4N65-TO251 , DG4N65-TO252 , DG4N65-TO220 , DG4N65-TO220F .

History: WML18N65EM | VBZQF50P03 | APT6013LFLL | TPC6106

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