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SVD730T Specs and Replacement

Type Designator: SVD730T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 69 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: TO220

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SVD730T datasheet

 ..1. Size:622K  1
 svd730d svd730f svd730t.pdf pdf_icon

SVD730T

SVD730D/F/T_Datasheet 5.5A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD730D/F/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch... See More ⇒

Detailed specifications: KIA2906A-247, KIA50N06, NTD4963NG, PFP13N60, PFF13N60, QM3054M6, SVD730D, SVD730F, 2N60, TP0202T, TP0610K, TTK2837, UT70N03G, DG4N65-TO251, DG4N65-TO252, DG4N65-TO220, DG4N65-TO220F

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