TP0202T PDF and Equivalents Search

 

TP0202T Specs and Replacement

Type Designator: TP0202T

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.41 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: SOT23

TP0202T substitution

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TP0202T datasheet

 ..1. Size:31K  1
tp0202t.pdf pdf_icon

TP0202T

TP0202T Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = 10 V 1.3 to 3 V 0.41 20 3.5 @ VGS = 4.5 V 1.3 to 3 V 0.27 FEATURES BENEFITS APPLICATIONS D High-Side Switching D Ease in Driving Switches D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D ... See More ⇒

 ..2. Size:38K  vishay
tp0202t.pdf pdf_icon

TP0202T

TP0202T Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = 10 V 1.3 to 3 V 0.41 20 3.5 @ VGS = 4.5 V 1.3 to 3 V 0.27 FEATURES BENEFITS APPLICATIONS D High-Side Switching D Ease in Driving Switches D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D ... See More ⇒

 8.1. Size:210K  vishay
tp0202k.pdf pdf_icon

TP0202T

TP0202K Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) VGS(th) (V) ID (mA) Qg (Typ.) Available TrenchFET Power MOSFET 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 High-Side Switching - 30 1000 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 Low On-Resistance 1.2 (typ.) Low T... See More ⇒

 9.1. Size:41K  vishay
tp0205a tp0205ad.pdf pdf_icon

TP0202T

TP0205A/AD New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET, Low-Threshold PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 3.8 @ VGS = 4.5 V 180 20 5.0 @ VGS = 2.5 V 100 FEATURES BENEFITS APPLICATIONS D High-Side Switching D Ease in Driving Switches D Drivers Relays, Solenoids, Lamps, Hammers, Display, Memories D Low On-Resistance 2.6 W (typ) D Low Offset (Error... See More ⇒

Detailed specifications: KIA50N06, NTD4963NG, PFP13N60, PFF13N60, QM3054M6, SVD730D, SVD730F, SVD730T, 8N60, TP0610K, TTK2837, UT70N03G, DG4N65-TO251, DG4N65-TO252, DG4N65-TO220, DG4N65-TO220F, DG4N65-TO262

Keywords - TP0202T MOSFET specs

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