TP0202T - параметры транзистора MOSFET, его аналоги, datasheet

TP0202T Datasheet (PDF)

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TP0202TVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYV(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)1.4 @ VGS = 10 V 1.3 to 3 V 0.41203.5 @ VGS = 4.5 V 1.3 to 3 V 0.27FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D

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TP0202KVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA) Qg (Typ.)Available TrenchFET Power MOSFET1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 High-Side Switching- 30 10003.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 Low On-Resistance: 1.2 (typ.) Low T

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TP0205A/ADNew ProductVishay SiliconixP-Channel 20-V (D-S) MOSFET, Low-ThresholdPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)3.8 @ VGS = 4.5 V 180205.0 @ VGS = 2.5 V 100FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps,Hammers, Display, MemoriesD Low On-Resistance: 2.6 W (typ) D Low Offset (Error