All MOSFET. UT70N03G Datasheet

 

UT70N03G Datasheet and Replacement


   Type Designator: UT70N03G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO251 TO252
 

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UT70N03G Datasheet (PDF)

 7.1. Size:146K  utc
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UT70N03G

UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

Datasheet: PFF13N60 , QM3054M6 , SVD730D , SVD730F , SVD730T , TP0202T , TP0610K , TTK2837 , RU6888R , DG4N65-TO251 , DG4N65-TO252 , DG4N65-TO220 , DG4N65-TO220F , DG4N65-TO262 , HY3403D , HY3403U , HY3403V .

History: 2SK1019

Keywords - UT70N03G MOSFET datasheet

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