UT70N03G Specs and Replacement
Type Designator: UT70N03G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 245 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
UT70N03G substitution
- MOSFET ⓘ Cross-Reference Search
UT70N03G datasheet
ut70n03.pdf
UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)... See More ⇒
Detailed specifications: PFF13N60, QM3054M6, SVD730D, SVD730F, SVD730T, TP0202T, TP0610K, TTK2837, AO3400A, DG4N65-TO251, DG4N65-TO252, DG4N65-TO220, DG4N65-TO220F, DG4N65-TO262, HY3403D, HY3403U, HY3403V
Keywords - UT70N03G MOSFET specs
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History: G50N03A
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