All MOSFET. DG4N65-TO251 Datasheet

 

DG4N65-TO251 Datasheet and Replacement


   Type Designator: DG4N65-TO251
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO251
 

 DG4N65-TO251 substitution

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DG4N65-TO251 Datasheet (PDF)

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DG4N65-TO251

DG4N65V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG4N65N

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DG4N65-TO251

DG4N60V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG4N60N

Datasheet: QM3054M6 , SVD730D , SVD730F , SVD730T , TP0202T , TP0610K , TTK2837 , UT70N03G , IRFB31N20D , DG4N65-TO252 , DG4N65-TO220 , DG4N65-TO220F , DG4N65-TO262 , HY3403D , HY3403U , HY3403V , HY3410P .

Keywords - DG4N65-TO251 MOSFET datasheet

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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