DG4N65-TO220F PDF and Equivalents Search

 

DG4N65-TO220F Specs and Replacement

Type Designator: DG4N65-TO220F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO220F

DG4N65-TO220F substitution

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DG4N65-TO220F datasheet

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DG4N65-TO220F

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DG4N65-TO220F

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Detailed specifications: SVD730T, TP0202T, TP0610K, TTK2837, UT70N03G, DG4N65-TO251, DG4N65-TO252, DG4N65-TO220, 7N60, DG4N65-TO262, HY3403D, HY3403U, HY3403V, HY3410P, HY3410M, HY3410B, HY3410PS

Keywords - DG4N65-TO220F MOSFET specs

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