DG4N65-TO220F MOSFET. Datasheet pdf. Equivalent
Type Designator: DG4N65-TO220F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 59 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO220F
DG4N65-TO220F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DG4N65-TO220F Datasheet (PDF)
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