HY3410B MOSFET. Datasheet pdf. Equivalent
Type Designator: HY3410B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 285 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 140 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 943 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO263
HY3410B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY3410B Datasheet (PDF)
hy3410p hy3410m hy3410b hy3410ps hy3410pm hy3410mf.pdf
HY3410P/M/B/PS/PM/MFN-Channel Enhancement Mode MOSFETPin DescriptionFeatures 100V/140ASRDS(ON)= 6.2 m(typ.) @ VGS=10VDGSD 100% avalanche testedGSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSSpplicationsDA DGGTO-3PS-3L TO-3PM-3STO-220MF-3LSw
hy3410.pdf
HY3410P/M/B/PS/PM/MFAbsolute Maximum RatingsSymbol Parameter Rating Unit Common Ratings (TC=25C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage 25 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25C 140 A Mounted on Large Heat Sink IDM Pulsed Drain Current *
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
