All MOSFET. HY3410B Datasheet

 

HY3410B Datasheet and Replacement


   Type Designator: HY3410B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 285 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 943 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO263
 

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HY3410B Datasheet (PDF)

 ..1. Size:1363K  hymexa
 hy3410p hy3410m hy3410b hy3410ps hy3410pm hy3410mf.pdf pdf_icon

HY3410B

HY3410P/M/B/PS/PM/MFN-Channel Enhancement Mode MOSFETPin DescriptionFeatures 100V/140ASRDS(ON)= 6.2 m(typ.) @ VGS=10VDGSD 100% avalanche testedGSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSSpplicationsDA DGGTO-3PS-3L TO-3PM-3STO-220MF-3LSw

 8.1. Size:1041K  1
 hy3410.pdf pdf_icon

HY3410B

HY3410P/M/B/PS/PM/MFAbsolute Maximum RatingsSymbol Parameter Rating Unit Common Ratings (TC=25C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage 25 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25C 140 A Mounted on Large Heat Sink IDM Pulsed Drain Current *

Datasheet: DG4N65-TO220 , DG4N65-TO220F , DG4N65-TO262 , HY3403D , HY3403U , HY3403V , HY3410P , HY3410M , EMB04N03H , HY3410PS , HY3410PM , HY3410MF , JCS3910V , JCS3910R , MMD65R900QRH , S68N08R , S68N08S .

History: ME7170 | IRFP4004 | SI2300BDS-T1-GE3 | MTP20N20E | FDPC8011S | IRF6894MPBF | SL160N03R

Keywords - HY3410B MOSFET datasheet

 HY3410B cross reference
 HY3410B equivalent finder
 HY3410B lookup
 HY3410B substitution
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