S68N08R Datasheet and Replacement
Type Designator: S68N08R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 388 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: TO220
S68N08R substitution
S68N08R Datasheet (PDF)
s68n08r s68n08s.pdf

SI-TECH SEMICONDUCTOR CO.,LTD S68N08R/S N-Channel MOSFET Features 68V, 80A,Rds(on)(typ)=6.5m @Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Techs advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-st
s68n08r s68n08s s68n08rn s68n08rp.pdf

S68N08R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=68V,ID=82A DC Motor Control Rds(on)(typ)=6.5m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD
s68n08zr s68n08zs s68n08zrn s68n08zrp.pdf

S68N08ZR/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=68V,ID=80A DC Motor Control Rds(on)(typ)=6.8m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD
Datasheet: HY3410M , HY3410B , HY3410PS , HY3410PM , HY3410MF , JCS3910V , JCS3910R , MMD65R900QRH , AO4468 , S68N08S , SVF10N65F , SVF10N65T , STD448S , CRTS084NE6N , HY3210P , HY3210M , HY3210B .
History: IPI35CN10NG | SSF10N60F | AO4404
Keywords - S68N08R MOSFET datasheet
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History: IPI35CN10NG | SSF10N60F | AO4404



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