All MOSFET. SVF740T Datasheet


SVF740T MOSFET. Datasheet pdf. Equivalent

Type Designator: SVF740T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 130 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16.18 nC

Rise Time (tr): 38.6 nS

Drain-Source Capacitance (Cd): 118.5 pF

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO220

SVF740T Transistor Equivalent Substitute - MOSFET Cross-Reference Search


SVF740T Datasheet (PDF)

0.1. svf740t svf740f.pdf Size:227K _1


SVF740T/F_Datasheet 10A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF740T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

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