SVF740T MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF740T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 130 W
Maximum Drain-Source Voltage |Vds|: 400 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16.18 nC
Rise Time (tr): 38.6 nS
Drain-Source Capacitance (Cd): 118.5 pF
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: TO220
SVF740T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF740T Datasheet (PDF)
0.1. svf740t svf740f.pdf 
Size:227K _1
SVF740T/F_Datasheet 10A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF740T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
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