R6007JND3 Datasheet PDF and Equivalents Search

 ..1. Size:1482K  1
 r6007jnd3.pdf

R6007JND3 Datasheet Nch 600V 7A Power MOSFET lOutline l TO-252 VDSS 600V RDS(on)(Max.) 0.780 ID 7A PD 96W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPac... See More ⇒

 ..2. Size:266K  inchange semiconductor
 r6007jnd3.pdf

isc N-Channel MOSFET Transistor R6007JND3 FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 780m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

 7.1. Size:2252K  1
 r6007jnj.pdf

R6007JNJ Datasheet Nch 600V 7A Power MOSFET lOutline l LPT(S) VDSS 600V RDS(on)(Max.) 0.780 ID 7A PD 96W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPack... See More ⇒

 7.2. Size:2206K  1
 r6007jnx.pdf

R6007JNX Datasheet Nch 600V 7A Power MOSFET lOutline l TO-220FM VDSS 600V RDS(on)(Max.) 0.780 ID 7A PD 46W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPa... See More ⇒

 7.3. Size:255K  inchange semiconductor
 r6007jnj.pdf

isc N-Channel MOSFET Transistor R6007JNJ FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 780m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

 7.4. Size:252K  inchange semiconductor
 r6007jnx.pdf

isc N-Channel MOSFET Transistor R6007JNX FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 780m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒