All MOSFET. R6007JND3 Datasheet

 

R6007JND3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: R6007JND3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 7 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.5 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
   Package: TO252

 R6007JND3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R6007JND3 Datasheet (PDF)

 ..1. Size:1482K  1
 r6007jnd3.pdf

R6007JND3 R6007JND3

R6007JND3DatasheetNch 600V 7A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)0.780ID7APD96W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac

 ..2. Size:266K  inchange semiconductor
 r6007jnd3.pdf

R6007JND3 R6007JND3

isc N-Channel MOSFET Transistor R6007JND3FEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 7.1. Size:2252K  1
 r6007jnj.pdf

R6007JND3 R6007JND3

R6007JNJDatasheetNch 600V 7A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)0.780ID7APD96W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPack

 7.2. Size:2206K  1
 r6007jnx.pdf

R6007JND3 R6007JND3

R6007JNXDatasheetNch 600V 7A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.780ID7APD46W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa

 7.3. Size:255K  inchange semiconductor
 r6007jnj.pdf

R6007JND3 R6007JND3

isc N-Channel MOSFET Transistor R6007JNJFEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 7.4. Size:252K  inchange semiconductor
 r6007jnx.pdf

R6007JND3 R6007JND3

isc N-Channel MOSFET Transistor R6007JNXFEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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