SSI7N60B PDF and Equivalents Search

 

SSI7N60B Specs and Replacement

Type Designator: SSI7N60B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: I2PAK

SSI7N60B substitution

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SSI7N60B datasheet

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SSI7N60B

November 2001 SSW7N60B / SSI7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to ... See More ⇒

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SSI7N60B

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Detailed specifications: R6006JNJ, R6006JNX, R6006KND3, R6006KNX, R6007JND3, R6007JNJ, R6007JNX, SSF7N60B, SPP20N60C3, SSW7N60B, STE40NA60, STE36N50A, STE45NK80ZD, STE38NB50, STE38NB50F, STE24NA100, STE15NA100

Keywords - SSI7N60B MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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