All MOSFET. SSW7N60B Datasheet

 

SSW7N60B Datasheet and Replacement


   Type Designator: SSW7N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: D2PAK
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SSW7N60B Datasheet (PDF)

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SSW7N60B

November 2001SSW7N60B / SSI7N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to

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SSW7N60B

 7.2. Size:505K  samsung
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SSW7N60B

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Lower RDS(ON) : 0.977 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FQA11N90C | TSM4424CS | LKK47-06C5 | HY1707PS | HM12N65F | BRCS200P03DP | IRFB3004GPBF

Keywords - SSW7N60B MOSFET datasheet

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