All MOSFET. SSW7N60B Datasheet

 

SSW7N60B Datasheet and Replacement


   Type Designator: SSW7N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: D2PAK
 

 SSW7N60B substitution

   - MOSFET ⓘ Cross-Reference Search

 

SSW7N60B Datasheet (PDF)

 ..1. Size:661K  1
 ssw7n60b ssi7n60b.pdf pdf_icon

SSW7N60B

November 2001SSW7N60B / SSI7N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to

 7.1. Size:219K  1
 ssi7n60a ssw7n60a.pdf pdf_icon

SSW7N60B

 7.2. Size:505K  samsung
 ssw7n60a.pdf pdf_icon

SSW7N60B

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Lower RDS(ON) : 0.977 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

Datasheet: R6006JNX , R6006KND3 , R6006KNX , R6007JND3 , R6007JNJ , R6007JNX , SSF7N60B , SSI7N60B , IRF9540N , STE40NA60 , STE36N50A , STE45NK80ZD , STE38NB50 , STE38NB50F , STE24NA100 , STE15NA100 , AO3409L .

History: FDMC6686P | SI4833DY

Keywords - SSW7N60B MOSFET datasheet

 SSW7N60B cross reference
 SSW7N60B equivalent finder
 SSW7N60B lookup
 SSW7N60B substitution
 SSW7N60B replacement

 

 
Back to Top

 


 
.