STE40NA60 Datasheet and Replacement
Type Designator: STE40NA60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 460 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 1500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
Package: ISOTOP
STE40NA60 substitution
STE40NA60 Datasheet (PDF)
ste40na60.pdf
STE40NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTE40NA60 600 V
ste40na60.pdf
STE40NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTE40NA60 600 V
ste40nc60.pdf
STE40NC60N-CHANNEL 600V - 0.098 - 40A ISOTOPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTE40NC60 600V
ste40nk90zd.pdf
STE40NK90ZDN-channel 900V - 0.14 - 40A ISOTOPSuper FREDmesh MOSFETGeneral featuresType VDSS RDS(on) ID PwSTE40NK90ZD 900V
Datasheet: R6006KND3 , R6006KNX , R6007JND3 , R6007JNJ , R6007JNX , SSF7N60B , SSI7N60B , SSW7N60B , K4145 , STE36N50A , STE45NK80ZD , STE38NB50 , STE38NB50F , STE24NA100 , STE15NA100 , AO3409L , FTP23N10A .
History: SI2101 | BUZ384 | 2SJ669
Keywords - STE40NA60 MOSFET datasheet
STE40NA60 cross reference
STE40NA60 equivalent finder
STE40NA60 lookup
STE40NA60 substitution
STE40NA60 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SI2101 | BUZ384 | 2SJ669
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