STE38NB50F MOSFET. Datasheet pdf. Equivalent
Type Designator: STE38NB50F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 38 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 880 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: ISOTOP
STE38NB50F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STE38NB50F Datasheet (PDF)
ste38nb50f.pdf
STE38NB50F N - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTE38NB50F 500 V
ste38nb50f.pdf
STE38NB50FN - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTE38NB50F 500 V
ste38nb50.pdf
STE38NB50N - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE V R IDSS DS(on) DSTE38NB50 500 V
ste38nb50.pdf
STE38NB50N - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE V R IDSS DS(on) DSTE38NB50 500 V
ste24n90 ste36n50-da ste36n50-dk ste38n60 ste38na50 ste45n50 ste50n40 ste90n25.pdf
TRANSISTORSPOWER MODULESBIPOLAR IN ISOTOPFor other conf.VCEO VCEV IC Ptot VCE (sat) @IC / IB ts* tf*Conf. Type(V) (V) (A) (W) (V) (A) (A) (s) (s)D ESM2012DV 125 150 120 175 2 100 1 0.9 0.15A BUT30V 125 200 100 250 1.5 100 10 1.0 0.1B BUT230V 125 200 200 300 1.9 200 20 1.0 0.1A BUT32V 300 400 80 250 1.9 40 4 1.9 0.12D ESM2030DV 300 400 67 150 2.2 56 1.6 2.0 0.35B BUT2
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918