STE38NB50F PDF and Equivalents Search

 

STE38NB50F Specs and Replacement

Type Designator: STE38NB50F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 880 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: ISOTOP

STE38NB50F substitution

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STE38NB50F datasheet

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STE38NB50F

STE38NB50F N - CHANNEL 500V - 0.11 - 38A - ISOTOP PowerMESH MOSFET TYPE VDSS RDS(on) ID STE38NB50F 500 V ... See More ⇒

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STE38NB50F

STE38NB50F N - CHANNEL 500V - 0.11 - 38A - ISOTOP PowerMESH MOSFET TYPE VDSS RDS(on) ID STE38NB50F 500 V ... See More ⇒

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STE38NB50F

STE38NB50 N - CHANNEL 500V - 0.11 - 38A - ISOTOP PowerMESH MOSFET TYPE V R I DSS DS(on) D STE38NB50 500 V ... See More ⇒

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STE38NB50F

STE38NB50 N - CHANNEL 500V - 0.11 - 38A - ISOTOP PowerMESH MOSFET TYPE V R I DSS DS(on) D STE38NB50 500 V ... See More ⇒

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Detailed specifications: R6007JNX, SSF7N60B, SSI7N60B, SSW7N60B, STE40NA60, STE36N50A, STE45NK80ZD, STE38NB50, 5N65, STE24NA100, STE15NA100, AO3409L, FTP23N10A, HY3003P, HY3003B, IPD70R900P7S, MDE1991RH

Keywords - STE38NB50F MOSFET specs

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