All MOSFET. STE38NB50F Datasheet

 

STE38NB50F Datasheet and Replacement


   Type Designator: STE38NB50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 880 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: ISOTOP
 

 STE38NB50F substitution

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STE38NB50F Datasheet (PDF)

 ..1. Size:95K  1
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STE38NB50F

STE38NB50F N - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTE38NB50F 500 V

 ..2. Size:271K  st
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STE38NB50F

STE38NB50FN - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTE38NB50F 500 V

 5.1. Size:289K  1
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STE38NB50F

STE38NB50N - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE V R IDSS DS(on) DSTE38NB50 500 V

 5.2. Size:280K  st
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STE38NB50F

STE38NB50N - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE V R IDSS DS(on) DSTE38NB50 500 V

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Datasheet: R6007JNX , SSF7N60B , SSI7N60B , SSW7N60B , STE40NA60 , STE36N50A , STE45NK80ZD , STE38NB50 , IRF4905 , STE24NA100 , STE15NA100 , AO3409L , FTP23N10A , HY3003P , HY3003B , IPD70R900P7S , MDE1991RH .

History: IRF9242 | 4N60KL-TMS4-T | RU40P4H | BSL303SPE | AP6679GI | 2SK1386 | PJM3401PSC

Keywords - STE38NB50F MOSFET datasheet

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