STE15NA100 MOSFET. Datasheet pdf. Equivalent
Type Designator: STE15NA100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 470 nC
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.77 Ohm
Package: ISOTOP
STE15NA100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STE15NA100 Datasheet (PDF)
ste15na100.pdf
STE15NA100N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTE15NA100 1000 V
ste15na100.pdf
STE15NA100N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTE15NA100 1000 V
ste150n10.pdf
STE150N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE V R IDSS DS(on) DSTE150N10 100 V
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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