APT20M18LVFR Datasheet and Replacement. Cross Reference Search

APT20M18LVFR Datasheet (PDF)

..1. Size:255K inchange semiconductor
apt20m18lvfr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT20M18LVFRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.018(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

0.1. Size:152K apt
apt20m18b2vfrg apt20m18lvfrg.pdf pdf_icon

APT20M18B2VFRA20M18LVFR200V 100A 0.018B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

4.1. Size:159K apt
apt20m18b2vrg apt20m18lvrg.pdf pdf_icon

APT20M18B2VRA20M18LVR200V 100A 0.018B2VR POWER MOS V MOSFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LV

4.2. Size:255K inchange semiconductor
apt20m18lvr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT20M18LVRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.018(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Datasheet: IPD70R900P7S , MDE1991RH , NCEP1520K , RJK6035DPP-E0 , STK0160 , 23N50 , APT10M09LVFR , APT20M16LFLL , P0903BDG , APT20M18LVR , APT20M20LFLL , APT30M30B2FLL , APT30M36B2FLL , APT30M36LFLL , APT30M36LLL , APT30M61BFLL , APT30M75BFLL .