All MOSFET. APT20M18LVFR Datasheet

 

APT20M18LVFR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT20M18LVFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 330 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 2320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO264

 APT20M18LVFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT20M18LVFR Datasheet (PDF)

 ..1. Size:255K  inchange semiconductor
 apt20m18lvfr.pdf

APT20M18LVFR APT20M18LVFR

isc N-Channel MOSFET Transistor APT20M18LVFRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.018(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 0.1. Size:152K  apt
 apt20m18b2vfrg apt20m18lvfrg.pdf

APT20M18LVFR APT20M18LVFR

APT20M18B2VFRA20M18LVFR200V 100A 0.018B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 4.1. Size:159K  apt
 apt20m18b2vrg apt20m18lvrg.pdf

APT20M18LVFR APT20M18LVFR

APT20M18B2VRA20M18LVR200V 100A 0.018B2VR POWER MOS V MOSFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LV

 4.2. Size:255K  inchange semiconductor
 apt20m18lvr.pdf

APT20M18LVFR APT20M18LVFR

isc N-Channel MOSFET Transistor APT20M18LVRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.018(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFG9110 | NTD4805NT4G

 

 
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