All MOSFET. R6009JND3 Datasheet

 

R6009JND3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: R6009JND3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 7 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.585 Ohm
   Package: TO-252

 R6009JND3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R6009JND3 Datasheet (PDF)

 ..1. Size:1480K  rohm
 r6009jnd3.pdf

R6009JND3 R6009JND3

R6009JND3DatasheetNch 600V 9A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)0.585ID9APD125W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa

 ..2. Size:266K  inchange semiconductor
 r6009jnd3.pdf

R6009JND3 R6009JND3

isc N-Channel MOSFET Transistor R6009JND3FEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 7.1. Size:2104K  rohm
 r6009jnx.pdf

R6009JND3 R6009JND3

R6009JNXDatasheetNch 600V 9A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.585ID9APD53W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa

 7.2. Size:1486K  rohm
 r6009jnj.pdf

R6009JND3 R6009JND3

R6009JNJDatasheetNch 600V 9A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)0.585ID9APD125W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac

 7.3. Size:252K  inchange semiconductor
 r6009jnx.pdf

R6009JND3 R6009JND3

isc N-Channel MOSFET Transistor R6009JNXFEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 7.4. Size:255K  inchange semiconductor
 r6009jnj.pdf

R6009JND3 R6009JND3

isc N-Channel MOSFET Transistor R6009JNJFEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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