All MOSFET. R6024KNZ1 Datasheet

 

R6024KNZ1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: R6024KNZ1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: TO-247

 R6024KNZ1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R6024KNZ1 Datasheet (PDF)

 ..1. Size:2160K  rohm
r6024knz1.pdf

R6024KNZ1 R6024KNZ1

R6024KNZ1DatasheetNch 600V 24A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.165 TO-247ID24APD 245W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliant.lPackaging specificationsl Packing Tube Reel size (mm) -

 ..2. Size:377K  inchange semiconductor
r6024knz1.pdf

R6024KNZ1 R6024KNZ1

isc N-Channel MOSFET Transistor R6024KNZ1FEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. Size:1234K  rohm
r6024knz.pdf

R6024KNZ1 R6024KNZ1

R6024KNZDatasheetNch 600V 24A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.165 TO-3PFID24APD 74W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lApp

 6.2. Size:265K  inchange semiconductor
r6024knz.pdf

R6024KNZ1 R6024KNZ1

isc N-Channel MOSFET Transistor R6024KNZFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.1. Size:1948K  rohm
r6024knj.pdf

R6024KNZ1 R6024KNZ1

R6024KNJDatasheetNch 600V 24A Power MOSFETlOutlinel TO-263VDSS600V SC-83RDS(on)(Max.)0.165 LPT(S)ID24APD245W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbossed Packing

 7.2. Size:1614K  rohm
r6024knx.pdf

R6024KNZ1 R6024KNZ1

R6024KNXDatasheetNch 600V 24A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.165 TO-220FMID24APD 74W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub

 7.3. Size:255K  inchange semiconductor
r6024knj.pdf

R6024KNZ1 R6024KNZ1

isc N-Channel MOSFET Transistor R6024KNJFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.4. Size:252K  inchange semiconductor
r6024knx.pdf

R6024KNZ1 R6024KNZ1

isc N-Channel MOSFET Transistor R6024KNXFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top