R6024KNZ1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: R6024KNZ1
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 245 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 24 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 50 ns
Выходная емкость (Cd): 1500 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.165 Ohm
Тип корпуса: TO-247
R6024KNZ1 Datasheet (PDF)
r6024knz1.pdf
R6024KNZ1DatasheetNch 600V 24A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.165 TO-247ID24APD 245W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliant.lPackaging specificationsl Packing Tube Reel size (mm) -
r6024knz1.pdf
isc N-Channel MOSFET Transistor R6024KNZ1FEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
r6024knz.pdf
R6024KNZDatasheetNch 600V 24A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.165 TO-3PFID24APD 74W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lApp
r6024knz.pdf
isc N-Channel MOSFET Transistor R6024KNZFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6024knj.pdf
R6024KNJDatasheetNch 600V 24A Power MOSFETlOutlinel TO-263VDSS600V SC-83RDS(on)(Max.)0.165 LPT(S)ID24APD245W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbossed Packing
r6024knx.pdf
R6024KNXDatasheetNch 600V 24A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.165 TO-220FMID24APD 74W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub
r6024knj.pdf
isc N-Channel MOSFET Transistor R6024KNJFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6024knx.pdf
isc N-Channel MOSFET Transistor R6024KNXFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
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