R6030KNZ MOSFET Datasheet: N-Ch, 600V, 30A. Full specification with pinout and replacement list

R6030KNZ Specs and Replacement

Type Designator: R6030KNZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 2000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO-3PF

R6030KNZ substitution

- MOSFET ⓘ Cross-Reference Search

R6030KNZ datasheet

..1. Size:2178K rohm
r6030knz.pdf pdf_icon

R6030KNZ Datasheet Nch 600V 30A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.130 TO-3PF ID 30A PD 86W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lApp... See More ⇒

..2. Size:266K inchange semiconductor
r6030knz.pdf pdf_icon

isc N-Channel MOSFET Transistor R6030KNZ FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

0.1. Size:2166K rohm
r6030knz1.pdf pdf_icon

R6030KNZ1 Datasheet Nch 600V 30A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.130 TO-247 ID 30A PD 305W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lA... See More ⇒

0.2. Size:304K inchange semiconductor
r6030knz1.pdf pdf_icon

isc N-Channel MOSFET Transistor R6030KNZ1 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒