R6030KNZ - аналоги, параметры транзистора - Справочник транзисторов

R6030KNZ даташит

..1. Size:2178K rohm
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R6030KNZ Datasheet Nch 600V 30A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.130 TO-3PF ID 30A PD 86W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lApp

..2. Size:266K inchange semiconductor
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isc N-Channel MOSFET Transistor R6030KNZ FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

0.1. Size:2166K rohm
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R6030KNZ1 Datasheet Nch 600V 30A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.130 TO-247 ID 30A PD 305W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lA

0.2. Size:304K inchange semiconductor
r6030knz1.pdf pdf_icon

isc N-Channel MOSFET Transistor R6030KNZ1 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp