R6030KNZ
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: R6030KNZ
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 86
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 30
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 56
nC
trⓘ -
Время нарастания: 65
ns
Cossⓘ - Выходная емкость: 2000
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13
Ohm
Тип корпуса:
TO-3PF
Аналог (замена) для R6030KNZ
R6030KNZ
Datasheet (PDF)
..1. Size:2178K rohm
r6030knz.pdf 
R6030KNZDatasheetNch 600V 30A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.130 TO-3PFID30APD 86W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lApp
..2. Size:266K inchange semiconductor
r6030knz.pdf 
isc N-Channel MOSFET Transistor R6030KNZFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
0.1. Size:2166K rohm
r6030knz1.pdf 
R6030KNZ1DatasheetNch 600V 30A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.130 TO-247ID30APD 305W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lA
0.2. Size:304K inchange semiconductor
r6030knz1.pdf 
isc N-Channel MOSFET Transistor R6030KNZ1FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
7.1. Size:1641K rohm
r6030knx.pdf 
R6030KNXDatasheetNch 600V 30A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.130 TO-220FMID30APD 86W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub
7.2. Size:252K inchange semiconductor
r6030knx.pdf 
isc N-Channel MOSFET Transistor R6030KNXFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
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