R6509ENJ MOSFET. Datasheet pdf. Equivalent
Type Designator: R6509ENJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 580 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.585 Ohm
Package: TO-263
R6509ENJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6509ENJ Datasheet (PDF)
r6509enj.pdf
R6509ENJDatasheetNch 650V 9A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.585ID 9APD 94W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Emboss
r6509enj.pdf
isc N-Channel MOSFET Transistor R6509ENJFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6509enx.pdf
R6509ENXDatasheetNch 650V 9A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.585ID 9APD 48W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bulk
r6509enx.pdf
isc N-Channel MOSFET Transistor R6509ENXFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6509knx.pdf
R6509KNXDatasheetNch 650V 9A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.585ID 9APD 48W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin
r6509knj.pdf
R6509KNJDatasheetNch 650V 9A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.585ID 9APD 94W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing
r6509knx.pdf
isc N-Channel MOSFET Transistor R6509KNXFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6509knj.pdf
isc N-Channel MOSFET Transistor R6509KNJFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
