R6509ENJ - описание и поиск аналогов

R6509ENJ Datasheet Nch 650V 9A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 0.585 ID 9A PD 94W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Emboss

isc N-Channel MOSFET Transistor R6509ENJ FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 585m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

R6509ENX Datasheet Nch 650V 9A Power MOSFET lOutline l TO-220FM VDSS 650V RDS(on)(Max.) 0.585 ID 9A PD 48W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Bulk

isc N-Channel MOSFET Transistor R6509ENX FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 585m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

R6509KNX Datasheet Nch 650V 9A Power MOSFET lOutline l TO-220FM VDSS 650V RDS(on)(Max.) 0.585 ID 9A PD 48W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packin

R6509KNJ Datasheet Nch 650V 9A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 0.585 ID 9A PD 94W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing

isc N-Channel MOSFET Transistor R6509KNX FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 585m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

isc N-Channel MOSFET Transistor R6509KNJ FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 585m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos