R6509ENX MOSFET. Datasheet pdf. Equivalent
Type Designator: R6509ENX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 580 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.585 Ohm
Package: TO-220F
R6509ENX Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6509ENX Datasheet (PDF)
r6509enx.pdf
R6509ENXDatasheetNch 650V 9A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.585ID 9APD 48W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bulk
r6509enx.pdf
isc N-Channel MOSFET Transistor R6509ENXFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6509enj.pdf
R6509ENJDatasheetNch 650V 9A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.585ID 9APD 94W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Emboss
r6509enj.pdf
isc N-Channel MOSFET Transistor R6509ENJFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6509knx.pdf
R6509KNXDatasheetNch 650V 9A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.585ID 9APD 48W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin
r6509knj.pdf
R6509KNJDatasheetNch 650V 9A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.585ID 9APD 94W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing
r6509knx.pdf
isc N-Channel MOSFET Transistor R6509KNXFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6509knj.pdf
isc N-Channel MOSFET Transistor R6509KNJFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
