All MOSFET. R6509KNX Datasheet

 

R6509KNX MOSFET. Datasheet pdf. Equivalent


   Type Designator: R6509KNX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.5 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.585 Ohm
   Package: TO-220F

 R6509KNX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R6509KNX Datasheet (PDF)

 ..1. Size:1441K  rohm
 r6509knx.pdf

R6509KNX R6509KNX

R6509KNXDatasheetNch 650V 9A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.585ID 9APD 48W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin

 ..2. Size:253K  inchange semiconductor
 r6509knx.pdf

R6509KNX R6509KNX

isc N-Channel MOSFET Transistor R6509KNXFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 7.1. Size:1409K  rohm
 r6509knj.pdf

R6509KNX R6509KNX

R6509KNJDatasheetNch 650V 9A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.585ID 9APD 94W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing

 7.2. Size:255K  inchange semiconductor
 r6509knj.pdf

R6509KNX R6509KNX

isc N-Channel MOSFET Transistor R6509KNJFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.1. Size:1409K  rohm
 r6509enx.pdf

R6509KNX R6509KNX

R6509ENXDatasheetNch 650V 9A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.585ID 9APD 48W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bulk

 9.2. Size:1390K  rohm
 r6509enj.pdf

R6509KNX R6509KNX

R6509ENJDatasheetNch 650V 9A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.585ID 9APD 94W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Emboss

 9.3. Size:252K  inchange semiconductor
 r6509enx.pdf

R6509KNX R6509KNX

isc N-Channel MOSFET Transistor R6509ENXFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.4. Size:255K  inchange semiconductor
 r6509enj.pdf

R6509KNX R6509KNX

isc N-Channel MOSFET Transistor R6509ENJFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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History: IRF260B | STP20N65M5

 

 
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