All MOSFET. R6520KNJ Datasheet

 

R6520KNJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: R6520KNJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 231 W
   Maximum Drain-Source Voltage |Vds|: 650 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
   Maximum Drain Current |Id|: 20 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 40 nC
   Rise Time (tr): 50 nS
   Drain-Source Capacitance (Cd): 1450 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.205 Ohm
   Package: TO-263

 R6520KNJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R6520KNJ Datasheet (PDF)

 ..1. Size:1365K  rohm
 r6520knj.pdf

R6520KNJ R6520KNJ

R6520KNJDatasheetNch 650V 20A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.205ID 20APD 231W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packi

 ..2. Size:255K  inchange semiconductor
 r6520knj.pdf

R6520KNJ R6520KNJ

isc N-Channel MOSFET Transistor R6520KNJFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.1. Size:1838K  rohm
 r6520knx.pdf

R6520KNJ R6520KNJ

R6520KNXDatasheetNch 650V 20A Power MOSFETlOutlinelVDSS 650VRDS(on)(Max.)0.205 TO-220FMID20APD 68W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub

 7.2. Size:2180K  rohm
 r6520knz.pdf

R6520KNJ R6520KNJ

R6520KNZDatasheetNch 650V 20A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.205ID 20APD 68W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS complianlApplicationllPackaging specificationslSwitching Packing

 7.3. Size:2141K  rohm
 r6520knz1.pdf

R6520KNJ R6520KNJ

R6520KNZ1DatasheetNch 650V 20A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.205ID 20APD 231W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pack

 7.4. Size:2218K  rohm
 r6520knx1.pdf

R6520KNJ R6520KNJ

R6520KNX1DatasheetNch 650V 20A Power MOSFETlOutlinel TO-220ABVDSS 650VRDS(on)(Max.) 0.205ID 20APD 220W lFeaturesllInner circuitl1) Low on-resistance2) Ultra Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pa

 7.5. Size:252K  inchange semiconductor
 r6520knx.pdf

R6520KNJ R6520KNJ

isc N-Channel MOSFET Transistor R6520KNXFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.6. Size:265K  inchange semiconductor
 r6520knz.pdf

R6520KNJ R6520KNJ

isc N-Channel MOSFET Transistor R6520KNZFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.7. Size:377K  inchange semiconductor
 r6520knz1.pdf

R6520KNJ R6520KNJ

isc N-Channel MOSFET Transistor R6520KNZ1FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 7.8. Size:261K  inchange semiconductor
 r6520knx1.pdf

R6520KNJ R6520KNJ

isc N-Channel MOSFET Transistor R6520KNX1FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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