R6520KNJ - описание и поиск аналогов

R6520KNJ Datasheet Nch 650V 20A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 0.205 ID 20A PD 231W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packi

isc N-Channel MOSFET Transistor R6520KNJ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 205m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

R6520KNX Datasheet Nch 650V 20A Power MOSFET lOutline l VDSS 650V RDS(on)(Max.) 0.205 TO-220FM ID 20A PD 68W lInner circuit l lFeatures l 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackaging specifications l Code Packing C7 G Tube lApplication l C7 Tub

R6520KNZ Datasheet Nch 650V 20A Power MOSFET lOutline l TO-3PF VDSS 650V RDS(on)(Max.) 0.205 ID 20A PD 68W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS complian lApplication l lPackaging specifications l Switching Packing

R6520KNZ1 Datasheet Nch 650V 20A Power MOSFET lOutline l TO-247 VDSS 650V RDS(on)(Max.) 0.205 ID 20A PD 231W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Pack

R6520KNX1 Datasheet Nch 650V 20A Power MOSFET lOutline l TO-220AB VDSS 650V RDS(on)(Max.) 0.205 ID 20A PD 220W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Pa

isc N-Channel MOSFET Transistor R6520KNX FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 205m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor R6520KNZ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 205m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor R6520KNZ1 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 205m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

isc N-Channel MOSFET Transistor R6520KNX1 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 205m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp