R6520KNX
MOSFET. Datasheet pdf. Equivalent
Type Designator: R6520KNX
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 68
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 40
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 1450
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.205
Ohm
Package:
TO-220F
R6520KNX
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6520KNX
Datasheet (PDF)
..1. Size:1838K rohm
r6520knx.pdf 
R6520KNXDatasheetNch 650V 20A Power MOSFETlOutlinelVDSS 650VRDS(on)(Max.)0.205 TO-220FMID20APD 68W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub
..2. Size:252K inchange semiconductor
r6520knx.pdf
isc N-Channel MOSFET Transistor R6520KNXFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
0.1. Size:2218K rohm
r6520knx1.pdf
R6520KNX1DatasheetNch 650V 20A Power MOSFETlOutlinel TO-220ABVDSS 650VRDS(on)(Max.) 0.205ID 20APD 220W lFeaturesllInner circuitl1) Low on-resistance2) Ultra Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pa
0.2. Size:261K inchange semiconductor
r6520knx1.pdf
isc N-Channel MOSFET Transistor R6520KNX1FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
7.1. Size:1365K rohm
r6520knj.pdf
R6520KNJDatasheetNch 650V 20A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.205ID 20APD 231W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packi
7.2. Size:2180K rohm
r6520knz.pdf
R6520KNZDatasheetNch 650V 20A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.205ID 20APD 68W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS complianlApplicationllPackaging specificationslSwitching Packing
7.3. Size:2141K rohm
r6520knz1.pdf
R6520KNZ1DatasheetNch 650V 20A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.205ID 20APD 231W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pack
7.4. Size:255K inchange semiconductor
r6520knj.pdf
isc N-Channel MOSFET Transistor R6520KNJFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
7.5. Size:265K inchange semiconductor
r6520knz.pdf
isc N-Channel MOSFET Transistor R6520KNZFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
7.6. Size:377K inchange semiconductor
r6520knz1.pdf
isc N-Channel MOSFET Transistor R6520KNZ1FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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