Справочник MOSFET. R6520KNX

 

R6520KNX MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: R6520KNX
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 68 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 40 nC
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 1450 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.205 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для R6520KNX

 

 

R6520KNX Datasheet (PDF)

 ..1. Size:1838K  rohm
 r6520knx.pdf

R6520KNX R6520KNX

R6520KNXDatasheetNch 650V 20A Power MOSFETlOutlinelVDSS 650VRDS(on)(Max.)0.205 TO-220FMID20APD 68W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub

 ..2. Size:252K  inchange semiconductor
 r6520knx.pdf

R6520KNX R6520KNX

isc N-Channel MOSFET Transistor R6520KNXFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 0.1. Size:2218K  rohm
 r6520knx1.pdf

R6520KNX R6520KNX

R6520KNX1DatasheetNch 650V 20A Power MOSFETlOutlinel TO-220ABVDSS 650VRDS(on)(Max.) 0.205ID 20APD 220W lFeaturesllInner circuitl1) Low on-resistance2) Ultra Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pa

 0.2. Size:261K  inchange semiconductor
 r6520knx1.pdf

R6520KNX R6520KNX

isc N-Channel MOSFET Transistor R6520KNX1FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 7.1. Size:1365K  rohm
 r6520knj.pdf

R6520KNX R6520KNX

R6520KNJDatasheetNch 650V 20A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.205ID 20APD 231W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packi

 7.2. Size:2180K  rohm
 r6520knz.pdf

R6520KNX R6520KNX

R6520KNZDatasheetNch 650V 20A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.205ID 20APD 68W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS complianlApplicationllPackaging specificationslSwitching Packing

 7.3. Size:2141K  rohm
 r6520knz1.pdf

R6520KNX R6520KNX

R6520KNZ1DatasheetNch 650V 20A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.205ID 20APD 231W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pack

 7.4. Size:255K  inchange semiconductor
 r6520knj.pdf

R6520KNX R6520KNX

isc N-Channel MOSFET Transistor R6520KNJFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.5. Size:265K  inchange semiconductor
 r6520knz.pdf

R6520KNX R6520KNX

isc N-Channel MOSFET Transistor R6520KNZFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.6. Size:377K  inchange semiconductor
 r6520knz1.pdf

R6520KNX R6520KNX

isc N-Channel MOSFET Transistor R6520KNZ1FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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