All MOSFET. R6530ENX Datasheet

 

R6530ENX MOSFET. Datasheet pdf. Equivalent

Type Designator: R6530ENX

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 86 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 90 nC

Rise Time (tr): 70 nS

Drain-Source Capacitance (Cd): 2300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm

Package: TO-220F

R6530ENX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R6530ENX Datasheet (PDF)

0.1. r6530enx.pdf Size:1920K _rohm

R6530ENX
R6530ENX

R6530ENXDatasheetNch 650V 30A Power MOSFETlOutlinelVDSS 650VRDS(on)(Max.)0.140 TO-220FMID30APD 86W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tube*Sw

0.2. r6530enx.pdf Size:252K _inchange_semiconductor

R6530ENX
R6530ENX

isc N-Channel MOSFET Transistor R6530ENXFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.1. r6530enz.pdf Size:2373K _rohm

R6530ENX
R6530ENX

R6530ENZDatasheetNch 650V 30A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.140ID 30APD 86W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube

7.2. r6530enz1.pdf Size:2376K _rohm

R6530ENX
R6530ENX

R6530ENZ1DatasheetNch 650V 30A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.140ID 30APD 305W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tu

 7.3. r6530enz.pdf Size:266K _inchange_semiconductor

R6530ENX
R6530ENX

isc N-Channel MOSFET Transistor R6530ENZFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

7.4. r6530enz1.pdf Size:303K _inchange_semiconductor

R6530ENX
R6530ENX

isc N-Channel MOSFET Transistor R6530ENZ1FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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