R6530ENZ1 MOSFET PDF: N-Ch, 650V, 30A. Full specification with pinout and replacement list

..1. Size:2376K rohm
r6530enz1.pdf pdf_icon

R6530ENZ1 Datasheet Nch 650V 30A Power MOSFET lOutline l TO-247 VDSS 650V RDS(on)(Max.) 0.140 ID 30A PD 305W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Tu... See More ⇒

..2. Size:303K inchange semiconductor
r6530enz1.pdf pdf_icon

isc N-Channel MOSFET Transistor R6530ENZ1 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 140m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

6.1. Size:2373K rohm
r6530enz.pdf pdf_icon

R6530ENZ Datasheet Nch 650V 30A Power MOSFET lOutline l TO-3PF VDSS 650V RDS(on)(Max.) 0.140 ID 30A PD 86W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Tube... See More ⇒

6.2. Size:266K inchange semiconductor
r6530enz.pdf pdf_icon

isc N-Channel MOSFET Transistor R6530ENZ FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 140m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

7.1. Size:1920K rohm
r6530enx.pdf pdf_icon

R6530ENX Datasheet Nch 650V 30A Power MOSFET lOutline l VDSS 650V RDS(on)(Max.) 0.140 TO-220FM ID 30A PD 86W lInner circuit l lFeatures l 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackaging specifications l Code Packing C7 G Tube lApplication l C7 Tube* Sw... See More ⇒

7.2. Size:252K inchange semiconductor
r6530enx.pdf pdf_icon

isc N-Channel MOSFET Transistor R6530ENX FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 140m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒