R6035KNZ1 MOSFET. Datasheet pdf. Equivalent
Type Designator: R6035KNZ1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 379 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 72 nC
trⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 2300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.102 Ohm
Package: TO-247
R6035KNZ1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6035KNZ1 Datasheet (PDF)
r6035knz1.pdf
R6035KNZ1DatasheetNch 600V 35A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.102 TO-247ID35APD 379W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lA
r6035knz1.pdf
isc N-Channel MOSFET Transistor R6035KNZ1FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 102m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
r6035knz.pdf
R6035KNZDatasheetNch 600V 35A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.102 TO-3PFID35APD 102W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lAp
r6035knz.pdf
isc N-Channel MOSFET Transistor R6035KNZFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 102m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
r6035enz1.pdf
R6035ENZ1 Nch 600V 35A Power MOSFET Data SheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.102WID35A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea
r6035enz.pdf
R6035ENZ Nch 600V 35A Power MOSFET Data SheetlOutlineVDSS600V TO-3PFRDS(on) (Max.)0.102WID35A(1) (2) PD120W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead
r6035enz1.pdf
isc N-Channel MOSFET Transistor R6035ENZ1FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 102m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
r6035enz.pdf
isc N-Channel MOSFET Transistor R6035ENZFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 102m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
