R6035KNZ1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: R6035KNZ1
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 379 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 35 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 72 nC
Время нарастания (tr): 150 ns
Выходная емкость (Cd): 2300 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.102 Ohm
Тип корпуса: TO-247
R6035KNZ1 Datasheet (PDF)
r6035knz1.pdf
R6035KNZ1DatasheetNch 600V 35A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.102 TO-247ID35APD 379W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lA
r6035knz1.pdf
isc N-Channel MOSFET Transistor R6035KNZ1FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 102m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
r6035knz.pdf
R6035KNZDatasheetNch 600V 35A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.102 TO-3PFID35APD 102W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lAp
r6035knz.pdf
isc N-Channel MOSFET Transistor R6035KNZFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 102m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
r6035enz1.pdf
R6035ENZ1 Nch 600V 35A Power MOSFET Data SheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.102WID35A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea
r6035enz.pdf
R6035ENZ Nch 600V 35A Power MOSFET Data SheetlOutlineVDSS600V TO-3PFRDS(on) (Max.)0.102WID35A(1) (2) PD120W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead
r6035enz1.pdf
isc N-Channel MOSFET Transistor R6035ENZ1FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 102m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
r6035enz.pdf
isc N-Channel MOSFET Transistor R6035ENZFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 102m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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