RD3L08CGN MOSFET. Datasheet pdf. Equivalent
Type Designator: RD3L08CGN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 55 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 510 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-252
RD3L08CGN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RD3L08CGN Datasheet (PDF)
rd3l08cgn.pdf
RD3L08CGNDatasheetNch 60V 80A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)7.0m TO-252ID80APD96W lInner circuitllFeaturesl1) Low on - resistance2) High power small mold package3) Pb-free lead plating ; RoHS compliant4) 100% Rg and UIS tested5) Halogen freelPackaging specificationslEmbossed
rd3l08cgn.pdf
isc N-Channel MOSFET Transistor RD3L08CGNFEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
rd3l080sn.pdf
RD3L080SNDatasheetNch 60V 8A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)80m TO-252ID8APD15W lInner circuitllFeaturesl1) Low on - resistance.2) Fast switching speed.3) Drive circuits can be simple.4) Parallel use is easy.5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbo
rd3l080sn.pdf
isc N-Channel MOSFET Transistor RD3L080SNFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
rd3l050sn.pdf
RD3L050SNDatasheetNch 60V 5A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)109m TO-252ID5.0APD15W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbos
rd3l050sn.pdf
isc N-Channel MOSFET Transistor RD3L050SNFEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 109m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NCEP080N85K
