All MOSFET. RD3L08CGN Datasheet

 

RD3L08CGN MOSFET. Datasheet pdf. Equivalent


   Type Designator: RD3L08CGN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-252

 RD3L08CGN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RD3L08CGN Datasheet (PDF)

 ..1. Size:2764K  rohm
 rd3l08cgn.pdf

RD3L08CGN RD3L08CGN

RD3L08CGNDatasheetNch 60V 80A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)7.0m TO-252ID80APD96W lInner circuitllFeaturesl1) Low on - resistance2) High power small mold package3) Pb-free lead plating ; RoHS compliant4) 100% Rg and UIS tested5) Halogen freelPackaging specificationslEmbossed

 ..2. Size:266K  inchange semiconductor
 rd3l08cgn.pdf

RD3L08CGN RD3L08CGN

isc N-Channel MOSFET Transistor RD3L08CGNFEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 8.1. Size:1596K  rohm
 rd3l080sn.pdf

RD3L08CGN RD3L08CGN

RD3L080SNDatasheetNch 60V 8A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)80m TO-252ID8APD15W lInner circuitllFeaturesl1) Low on - resistance.2) Fast switching speed.3) Drive circuits can be simple.4) Parallel use is easy.5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbo

 8.2. Size:265K  inchange semiconductor
 rd3l080sn.pdf

RD3L08CGN RD3L08CGN

isc N-Channel MOSFET Transistor RD3L080SNFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.1. Size:1594K  rohm
 rd3l050sn.pdf

RD3L08CGN RD3L08CGN

RD3L050SNDatasheetNch 60V 5A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)109m TO-252ID5.0APD15W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbos

 9.2. Size:265K  inchange semiconductor
 rd3l050sn.pdf

RD3L08CGN RD3L08CGN

isc N-Channel MOSFET Transistor RD3L050SNFEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 109m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top