RD3L08CGN PDF and Equivalents Search

 ..1. Size:2764K  rohm
 rd3l08cgn.pdf

RD3L08CGN Datasheet Nch 60V 80A Power MOSFET lOutline l VDSS 60V DPAK RDS(on)(Max.) 7.0m TO-252 ID 80A PD 96W lInner circuit l lFeatures l 1) Low on - resistance 2) High power small mold package 3) Pb-free lead plating ; RoHS compliant 4) 100% Rg and UIS tested 5) Halogen free lPackaging specifications l Embossed ... See More ⇒

 ..2. Size:266K  inchange semiconductor
 rd3l08cgn.pdf

isc N-Channel MOSFET Transistor RD3L08CGN FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 8.1. Size:1596K  rohm
 rd3l080sn.pdf

RD3L080SN Datasheet Nch 60V 8A Power MOSFET lOutline l VDSS 60V DPAK RDS(on)(Max.) 80m TO-252 ID 8A PD 15W lInner circuit l lFeatures l 1) Low on - resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant lPackaging specifications l Embo... See More ⇒

 8.2. Size:265K  inchange semiconductor
 rd3l080sn.pdf

isc N-Channel MOSFET Transistor RD3L080SN FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 80m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

 9.1. Size:1594K  rohm
 rd3l050sn.pdf

RD3L050SN Datasheet Nch 60V 5A Power MOSFET lOutline l VDSS 60V DPAK RDS(on)(Max.) 109m TO-252 ID 5.0A PD 15W lInner circuit l lFeatures l 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant lPackaging specifications l Embos... See More ⇒

 9.2. Size:265K  inchange semiconductor
 rd3l050sn.pdf

isc N-Channel MOSFET Transistor RD3L050SN FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 109m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒