RD3L08CGN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RD3L08CGN
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 96 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 80 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 55 nC
Время нарастания (tr): 32 ns
Выходная емкость (Cd): 510 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.007 Ohm
Тип корпуса: TO-252
RD3L08CGN Datasheet (PDF)
rd3l08cgn.pdf
RD3L08CGNDatasheetNch 60V 80A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)7.0m TO-252ID80APD96W lInner circuitllFeaturesl1) Low on - resistance2) High power small mold package3) Pb-free lead plating ; RoHS compliant4) 100% Rg and UIS tested5) Halogen freelPackaging specificationslEmbossed
rd3l08cgn.pdf
isc N-Channel MOSFET Transistor RD3L08CGNFEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
rd3l080sn.pdf
RD3L080SNDatasheetNch 60V 8A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)80m TO-252ID8APD15W lInner circuitllFeaturesl1) Low on - resistance.2) Fast switching speed.3) Drive circuits can be simple.4) Parallel use is easy.5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbo
rd3l080sn.pdf
isc N-Channel MOSFET Transistor RD3L080SNFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
rd3l050sn.pdf
RD3L050SNDatasheetNch 60V 5A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)109m TO-252ID5.0APD15W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbos
rd3l050sn.pdf
isc N-Channel MOSFET Transistor RD3L050SNFEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 109m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
