RD3L08CGN - аналоги, параметры транзистора - Справочник транзисторов

RD3L08CGN даташит

..1. Size:2764K rohm
rd3l08cgn.pdf pdf_icon

RD3L08CGN Datasheet Nch 60V 80A Power MOSFET lOutline l VDSS 60V DPAK RDS(on)(Max.) 7.0m TO-252 ID 80A PD 96W lInner circuit l lFeatures l 1) Low on - resistance 2) High power small mold package 3) Pb-free lead plating ; RoHS compliant 4) 100% Rg and UIS tested 5) Halogen free lPackaging specifications l Embossed

..2. Size:266K inchange semiconductor
rd3l08cgn.pdf pdf_icon

isc N-Channel MOSFET Transistor RD3L08CGN FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

8.1. Size:1596K rohm
rd3l080sn.pdf pdf_icon

RD3L080SN Datasheet Nch 60V 8A Power MOSFET lOutline l VDSS 60V DPAK RDS(on)(Max.) 80m TO-252 ID 8A PD 15W lInner circuit l lFeatures l 1) Low on - resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant lPackaging specifications l Embo

8.2. Size:265K inchange semiconductor
rd3l080sn.pdf pdf_icon

isc N-Channel MOSFET Transistor RD3L080SN FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 80m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos