RD3L150SN MOSFET. Datasheet pdf. Equivalent
Type Designator: RD3L150SN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-252
RD3L150SN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RD3L150SN Datasheet (PDF)
rd3l150sn.pdf
RD3L150SN DatasheetNch 60V 15A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)40m TO-252ID15APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbosse
rd3l150sn.pdf
isc N-Channel MOSFET Transistor RD3L150SNFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
rd3l140sp.pdf
RD3L140SPDatasheetPch -60V -14A Power MOSFETlOutlinelVDSS-60V DPAKRDS(on)(Max.)84m TO-252ID14APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmb
rd3l140sp.pdf
isc P-Channel MOSFET Transistor RD3L140SPFEATURESDrain Current I = -14A@ T =25D CDrain Source Voltage-: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R = 84m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
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